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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION With TO-220Fa package Collector power dissipation :PC=25W@TC=25ae Low collector saturation voltage Complement to type 2SD1406 APPLICATIONS For audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB HAN C PARAMETER IN Collector-base voltage SEM GE Open base CONDITIONS OND IC TOR UC VALUE -60 -60 -7 -3 -0.5 UNIT V V V A A Open emitter Collector-emitter voltage Emitter-base voltage Collector current Base current Open collector Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2.0 W 25 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-3A; IB=-0.3A IC=-0.5A ;VCE=-5V VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A; VCE=-5V f=1MHz ; VCB=-10V 60 20 9 MIN -60 2SB1015 SYMBOL VCEO(BR) VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -1.7 -1.0 -100 -100 200 |I |I V V A A Switching times ton ts tf Fall time Collector output capacitance MHz pF Trun-on time Storage time HAN INC Y 100-200 SEM GE RL=15| ;VCC=-30V IB1=-IB2=-0.2A Duty cycleU 1% OND IC TOR UC 150 0.4 1.7 0.5 |I |I |I s s s hFE-1 Classifications O 60-120 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1015 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1015 SEM GE HAN INC OND IC TOR UC 4 |
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